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| BFP620_E7764 NPN Silicon Germanium RF Transistor High gain low noise RF transistor Provides outstanding performance for a wide range of wireless applications Ideal for CDMA and WLAN applications Outstanding noise figure F = 0.7 dB at 1.8 GHz Outstanding noise figure F = 1.3 dB at 6 GHz Maximum stable gain Gms = 21.5 dB at 1.8 GHz Gma = 11 dB at 6 GHz Gold metallization for extra high reliability 3 4 Junction temperature Ambient temperature Storage temperature Thermal Resistance Parameter 1T is measured on the collector lead at the soldering point to the pcb S 2For calculation of R please refer to Application Note Thermal Resistance thJA 1 Junction - soldering point2) 2 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Pin Configuration Package BFP620_E7764 Maximum Ratings Parameter R2s 1=B 2=E 3=C 4=E Symbol VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg Symbol RthJS - - SOT343 Value Unit Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation1) TS 2.3 7.5 7.5 1.2 80 3 185 150 -65 ... 150 -65 ... 150 Value V mA mW C 95C Unit 300 K/W Jul-03-2003 BFP620_E7764 Electrical Characteristics at TA = 25C, unless otherwise specified Parameter DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 7.5 V, VBE = 0 Collector-base cutoff current VCB = 5 V, IE = 0 Emitter-base cutoff current VEB = 0.5 V, IC = 0 DC current gain IC = 50 mA, VCE = 1.5 V hFE 100 180 320 IEBO 3 A ICBO 100 nA ICES 10 A V(BR)CEO 2.3 2.8 V Symbol min. Values typ. max. Unit 2 Jul-03-2003 BFP620_E7764 Electrical Characteristics at TA = 25C, unless otherwise specified Symbol Values Parameter min. typ. max. AC Characteristics (verified by random sampling) Transition frequency fT I C = 50 mA, VCE = 1.5 V, f = 1 GHz Collector-base capacitance VCB = 2 V, f = 1 MHz Collector emitter capacitance VCE = 2 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Noise figure I C = 5 mA, V CE = 1.5 V, f = 1.8 GHz, ZS = ZSopt I C = 5 mA, V CE = 1.5 V, f = 6 GHz, ZS = ZSopt Power gain, maximum stable 1) I C = 50 mA, VCE = 1.5 V, ZS = Z Sopt, Z L = ZLopt , f = 1.8 GHz Power gain, maximum available1) I C = 50 mA, VCE = 1.5 V, ZS = Z Sopt, Z L = ZLopt, f = 6 GHz Transducer gain f = 1.8 GHz I C = 50 mA, VCE = 1.5 V, ZS = Z L = 50 f = 6 GHz Third order intercept point at output 2) VCE = 2 V, IC = 50 mA, f = 1.8 GHz, 1dB Compression point at output f = 1.8 GHz Z S = ZL = 50 |S21e|2 , , IP3 9.5 25 dBm 20 dB I C = 50 mA, VCE = 1.5 V, ZS = Z L = 50 Gma 11 dB Gms F 0.7 1.3 21.5 dB dB Ceb 0.46 Cce 0.22 Ccb 0.12 0.2 pF 65 - Unit GHz 1G 1/2 ma = |S21e / S12e | (k-(k-1) ), Gms = |S21e / S12e| 2IP3 value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50 from 0.1 MHz to 6 GHz I C = 50 mA, VCE = 2 V, Z S = Z L = 50 , P-1dB - 15 - 3 Jul-03-2003 BFP620_E7764 SPICE Parameter (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax): Transitor Chip Data: IS = VAF = NE = VAR = NC = RBM = CJE = TF = ITF = VJC = TR = MJS = XTI = AF = TITF1 0.22 1000 2 2 2 2.707 250.7 1.43 2.4 0.6 0.2 0.5 3 2 -0.0065 fA V V fF ps A V ns BF = IKF = BR = IKR = RB = RE = VJE = XTF = PTF = MJC = CJS = NK = FC = KF = TITF2 425 0.25 50 10 3.129 0.6 0.75 10 0 0.5 128.1 -1.42 0.8 7.291E-11 1.0E-5 A mA V deg fF NF = ISE = NR = ISC = IRB = RC = MJE = VTF = CJC = XCJC = VJS = EG = TNOM 1.025 21 1 18 1.522 2.364 0.3 1.5 124.9 1 0.52 1.078 298 fA pA mA V fF V eV K All parameters are ready to use, no scalling is necessary. Package Equivalent Circuit: RCBS CBCC C B F P 6 2 0 _ C h ip S B E RCES LCC B LBB LBC CBEC RCCS LCB C LEC CBEI LEB CBEO T= 2 5 C CCEO CCEI Itf = 2 4 0 0 * ( 1 - 6 .5 e -3 * (T -2 5 ) + 1 .0 e -5 * (T -2 5 )^ 2 ) E 1200 300 Valid up to 6GHz 4 Jul-03-2003 For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales office to obtain a Infineon Technologies CD-ROM or see Internet: http//www.infineon.com/silicondiscretes LBC = LCC = LEC = LBB = LCB = LEB = CBEC = CBCC = CES = CBS = CCS = CCEO = CBEO = CCEI = CBEI = RBS = RCS = RES = 60 50 15 764.5 725.4 259.6 98.4 55.9 140 54 50 106.5 106.7 132.4 99.6 1200 pH pH pH pH pH pH fF fF fF fF fF fF fF fF fF BFP620_E7764 Total power dissipation Ptot = (TS ) Permissible Pulse Load RthJS = (tp ) 200 mW 160 RthJS 140 P tot 120 100 80 60 40 20 0 0 120 C 20 40 60 80 100 10 1 Ptotmax/ PtotDC CCB D=0 0.005 0,01 0,02 0,05 0,1 0,2 0,5 10 0 -7 10 10 -6 10 Ptotmax/PtotDC = (tp) f = 1MHz 0.4 pF 0.3 0.25 0.2 0.15 0.1 0.05 -5 10 -4 10 -3 10 -2 C 10 0 0 0 1 2 3 4 5 V tp 5 Jul-03-2003 Permissible Pulse Load 10 3 K/W 10 2 D = 0.5 0.2 0.1 0.05 0.02 0.01 0.005 0 150 10 1 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 C 10 0 TS tp Collector-base capacitance Ccb = (VCB ) 7 VCB BFP620_E7764 Third order Intercept Point IP3=(IC) (Output, ZS=ZL=50) Transition frequency fT= (IC) f = 1GHz VCE = Parameter in V 65 GHz 55 50 45 1 1.3 to 2.3 VCE = parameter, f = 900MHz 27 dBm 2.3V 21 18 15 12 0.8V 1.8V IP3 1.3V fT 40 35 30 25 20 15 10 0.3 0.5 0.8 9 6 3 0 0 5 10 20 30 40 50 60 70 80 mA 100 0 0 10 20 30 40 50 60 70 80 mA 100 IC IC VCE = 1.5V f = Parameter in GHz 30 dB |S21| = f (f) VCE = 1.5V, IC = 50mA 55 dB 0.9 26 24 22 45 40 G 20 30 18 16 14 12 10 8 0 10 20 30 40 50 60 70 mA 2.4 3 4 5 6 Gms G 1.8 35 25 20 15 10 5 0 GHz |S21| Gma 90 1 2 3 IC 6 Power gain Gma, Gms = (IC ) Power Gain Gma, Gms = (f), 4 6 f Jul-03-2003 BFP620_E7764 Power gain Gma, Gms = IC = 50mA f = Parameter in GHz 30 dB 1.8 0.9 (VCE ) 20 2.4 3 G 15 4 5 6 10 5 0 -5 0.2 0.6 1 1.4 1.8 V 2.6 VCE 7 Jul-03-2003 |
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